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Our testing lab makes professional evaluation on semiconductor properties, including static characteristics, dynamic characteristics and thermal characteristics. Besides SPICE model extraction curves and discrete device datasheet, we are experienced in some special items such as S21 of TVS, dv/dt of MOSFET and fT of BJT. On account of the diversity of customer requirements, we will give an official quotation according to complexity and man-hour of your project.
Please refer to Table 1, Table 2 and Table 3 for test items available.
Table 1 Test Items of Diode
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Test Category
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Test Items
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Note
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Parameter
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Symbol
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Electrical Characteristics
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Static Characteristics
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Forward Voltage
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VF
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1. The temperature range is from -40 to 200℃
2. Curves and waveforms can be provided
3. DC：Imax=400A, Vmax=3000V
4. AC：Imax=1000A, Vmax=1200V
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Reverse Current
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IR
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Breakdown Voltage
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V（BR）
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Average Rectified Output Current
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IF（AV）
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Dynamic Characteristics
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Junction Capacitance
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CJ
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Reverse Recovery Time etc.
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Trr/Ta/Tb/S
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Peak Reverse Recovery Current
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Irm
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Reverse Recovery Charge
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Qrr
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Voltage Rate of Change
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dv/dt
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Thermal Characteristics
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Maximum Power Dissipation
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PD
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Thermal Resistance, Junction to Ambient
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Rthj-a
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Thermal Resistance, Junction to Case
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Rthj-c
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or j-l according to the package
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Special Characteristics
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Insertion Loss
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S21
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Clamping Voltage
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Vc
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8/20μs and 10/1000μs
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Dynamic Resistance
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RDYN
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TLP test
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Single Pulsed Avalanche Energy
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EAS
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Table 2 Test Items of Transistor
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Test Category
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Test Items
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Test Category
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Parameter
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Electrical Characteristics
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Static Characteristics
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Breakdown Voltage
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V(BR)CEO/V(BR)CBO/V(BR)EBO
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1. The temperature range is from -40 to 200℃
2. Curves and waveforms can be provided
3. DC：Imax=400A, Vmax=3000V
4. AC：Imax=1000A, Vmax=1200V
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Cutoff Current
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ICEO/ICBO/IEBO
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DC Current Gain
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hFE
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Base-Emitter On Voltage
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VBE(on)
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Saturation Voltage
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VBE（sat）/VCE(sat)
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Dynamic Characteristics
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Capacitance
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Cobo/Cibo/Cre
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Delay Time
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Td
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Rise Time
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Tr
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Storage Time
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Ts
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Fall Time
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Tf
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Thermal Characteristics
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Maximum Power Dissipation
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PD
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Thermal Resistance, Junction to Ambient
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Rthj-a
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Thermal Resistance, Junction to Case
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Rthj-c
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Special Characteristics
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Gain Bandwidth Product
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fT
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Insertion Power Gain
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︱S21e︱2
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Noise Figure
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NF
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Frequency Range: 10MHz~2.047GHz
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Table 3 Test Items of MOSFET & IGBT
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Test Category
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Test Items
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Test Category
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Parameter
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Electrical Characteristics
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Static Characteristics
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Breakdown Voltage
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V(BR)DSS/V(BR)GSS
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1. The temperature range is from -40 to 200℃
2. Curves and waveforms can be provided
3. DC：Imax=400A, Vmax=3000V
4. AC：Imax=1000A, Vmax=1200V
5. For the IGBT, replace the drain and source MOSFET designations with collector and emitter IGBT designations, D = C and S = E
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Zero Gate Voltage Drain Current/Gate-Source Leakage Current
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IDSS/IGSS
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Gate Threshold Voltage
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VGS（th）
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Static Drain-Source On Resistance
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RDS(on)
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Collector-Emitter Saturation Voltage
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VCE(sat)
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Diode Forward Voltage
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VSD/VF
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Dynamic Characteristics
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Forward Trans-conductance
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Gfs
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Gate Input Resistance
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Rg
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Input/Output/Reverse Transfer Capacitance
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Ciss/Coss/Crss
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Effective Output Capacitance
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Coer/Cotr
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Switching Time
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Td(on)/Tr/Td(off)/Tf
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Switching Loss
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Eon/Eoff
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Diode Reverse Recovery Time etc.
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Trr/Ta/Tb/S/Irrm/Qrr
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Gate Charge
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Qg/Qgs/Qgd
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Short-circuit Current
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Isc/IDM
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Thermal Characteristics
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Maximum Power Dissipation
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PD
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Thermal Resistance, Junction to Ambient
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Rthj-a
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Thermal Resistance, Junction to Case
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Rthj-c
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Special Characteristics
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Single Pulsed Avalanche Energy
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EAS
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Note: Default test fixture is designed for TO and SMD, and new test fixture has to be made in advance for other package.
Contact Information：
Contact：Veronica Chou
Tel：0571-86714088-6192
Email：zhoujun@silanic.com.cn
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